Optical and Electrical Investigations on GaAs-Based Phototransistors
نویسندگان
چکیده
In order to exploit the potential of phototransistors for vertical-cavity surface-emitting laser (VCSEL) applications, optical and electrical investigations on GaAs-based devices were conducted. The characterization of phototransistors consists of measurements and improvements of the current gain and studies on the spectral behavior. In addition, the influences of various doping concentrations and different device structures, such as resonantcavity-enhanced phototransistors, will be introduced and discussed.
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تاریخ انتشار 2015